Liquid crystal display panel and method of fabricating thereof

ABSTRACT

The present invention relates to a liquid crystal display panel and a fabricating method thereof that is capable of enhancing crystallization efficiency of an active layer and simplifying the fabricating process. A fabricating method of a liquid crystal display panel includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode formed thereon; forming an amorphous silicon film on the gate insulating film; forming an insulating pattern on the amorphous silicon film; crystallizing the amorphous silicon film into a polycrystalline silicon film using a derivative metal, the polycrystalline silicon film having source, drain and channel areas, wherein the insulating pattern overlaps the channel area of the polycrystalline silicon film; and forming source and drain electrodes on the polycrystalline silicon film, wherein the source and the drain electrodes contacting the source and drain areas of the polycrystalline silicon film, respectively.

This application claims the benefit of Korean Patent-Application No.2003-42943, filed on Jun. 28, 2003, which is hereby incorporated byreference for all purposes as if fully set forth herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a liquid crystal display panel usingpolycrystalline silicon, and more particularly, to a liquid crystaldisplay panel and a method of fabricating thereof that is capable ofenhancing the crystallization efficiency of an active layer and reducingthe number of fabricating processes.

2. Discussion of the Related Art

Generally, liquid crystal displays (LCD) control the light transmittanceof liquid crystal cells in accordance with video signals, therebydisplaying pictures corresponding to the video signals on a liquidcrystal display panel where the liquid crystal cells are arranged in amatrix form. In this case, a thin film transistor (TFT) is typicallyused as a switching device for the liquid crystal cells.

The semiconductor layer of such a thin film transistor is made of eitheramorphous silicon or polycrystalline silicon. Amorphous silicon TFTshave an advantage in that they have relatively better uniformity andstable property. However, the amorphous silicon TFTs also have adisadvantage in that response speed is slow because the carrier mobilityof amorphous silicon is low. Thus, it is difficult to apply suchamorphous silicon TFTs to a high resolution display panel requiring arapid response speed or to a driving device for a gate driver and a datadriver. In contrast, because the carrier mobility of polycrystallinesilicon is high, polycrystalline silicon TFTs have drawn attention forthe applications of liquid crystal display panels with a high resolutionand peripheral driving circuits mounted in the display panels.

FIG. 1 and FIG. 2 are a plan view and a sectional view of a related artliquid crystal display panel having such a polycrystalline silicon TFT.

Referring to FIGS. 1 and 2, the liquid crystal display panel having thethin film transistor includes a gate line 2, a data line 4 crossing thegate line 2 with an insulating film 12 therebetween, a TFT 30 providedat a crossing of the gate line 2 and the data line 4, and a pixelelectrode 22 provided in a pixel area defined by the crossing of thegate line 2 and the data line 4.

The gate line 2 applies a gate signal to a gate electrode 6 of the TFT30. The data line 4 applies a pixel signal to the pixel electrode 22 viaa drain electrode 10 of the TFT 30.

The TFT 30 includes the gate electrode 6 connected to the gate line 2, asource electrode 8 connected to the data line 4 and a drain electrode 10connected, via a contact hole 20 passing through a passivation film 18,to the pixel electrode 22.

The gate electrode 6 is formed on a buffer film 16 so as to overlap achannel area 14C of the active layer, with the gate insulating film 12between the gate electrode 6 and the channel area 14C. The sourceelectrode 8 is formed to be insulated from the gate electrode 6 with thegate insulating film 12 therebetween and to be directly connected to asource area 14S of the active layer. The drain electrode 10 is formed tobe insulated from the gate electrode 6 with the gate insulating film 12therebetween and to be connected to a drain area 14D of the activelayer. Different ions, depending on the location of the active layer 14and type of the TFT 30, are injected into the active layer 14. In otherwords, if the TFT 30 has an N channel, at least one of n⁺ and n⁻ ions isinjected into the active layer. The active layer to which the n⁻ ionsare injected becomes a Lightly Doped Drain (LDD) area, which isgenerally used to reduce the off-current of the TFT 30. The active layerinto which the n⁺ ions are injected becomes the source area and thedrain area, and the active layer into which the n⁺ and n⁻ ions are notinjected become the channel area. If the TFT 30 has a P channel, p⁺ ionsare injected into the active layer. While the active layer into whichthe p⁺ ions are injected becomes the source and the drain areas, theactive layer into which the p⁺ ions are not injected become the channelarea.

Such a TFT 30 responds to a scanning pulse applied from the gate line 2,to thereby allow a video signal, that is, a pixel signal applied fromthe data line 4, to be charged in a liquid crystal cell. As a result,the liquid crystal cell controls a light transmittance in accordancewith the pixel signal.

As a result, an electric field is formed between the pixel electrode 22to which the pixel signal is applied via the TFT 30 and a commonelectrode (not shown), which exists usually on the other substrate.Liquid crystal molecules between the pixel electrode 22 and the commonelectrode rotate in response to the electric field due to the dielectricanisotropy of the liquid crystal molecules. The degree of the rotationcontrol the light transmittance of the pixel area, thereby displaying apicture.

FIGS. 3A to 3F are sectional views illustrating a fabricating process ofa liquid crystal display having polycrystalline silicon TFTs.

Firstly, an insulating material such as silicon oxide SiO₂ is depositedon the entire lower substrate 1, thereby forming a buffer film 16, asshown in FIG. 3A. A gate metal layer is deposited on the entire surfaceof the lower substrate 1 with the buffer film 16 thereon, and then thegate metal layer is patterned by photolithography and etching processesincluding exposing and developing steps, thereby forming a gateelectrode 6. The gate metal layer may be made of a metal includingaluminum and aluminum/neodymium, etc.

A gate insulating material such as silicon oxide SiO₂ is deposited onthe entire surface of the lower substrate 1 with the gate electrode 6thereon, thereby forming a gate insulating film 12 as shown in FIG. 3B.Then, an amorphous silicon film is deposited on the surface of the lowersubstrate 1 with the gate insulating film 12 thereon. Hydrogen containedin the deposited amorphous silicon film is removed by a dehydrogenatingprocess, which generally includes a thermal treatment step. After thedehydrogenating process, the amorphous silicon layer is crystallized bya laser annealing, in which the amorphous silicon layer turns into apolycrystalline silicon layer. The polycrystalline silicon layer ispatterned by photolithography and etching processes including exposingand developing steps, thereby forming an active layer 14.

A photo-resist is deposited on the entire surface of the active layer 14with the lower substrate 1 thereon, and then is patterned byphotolithography and etching processes including exposing and developingsteps, thereby forming a photo-resist pattern. A predetermined amount ofan impurity ion is injected into the area except for a channel area 14Cof the active layer using the photo-resist pattern as a mask, therebyforming a source area 14S and a drain area 14D of the active layer asshown in FIG. 3C.

Herein, in case of a N-type TFT, n⁺ ions are injected into the activelayer using a first photo-resist pattern as a mask, and n⁻ ions areinjected into the active layer using a second photo-resist patternhaving a narrower width than the first photo-resist pattern as a mask.Accordingly, in the active layer of the N-type TFT, the area into whichthe n⁺ and n⁻ ions are not injected becomes a channel area, the areainto which the n⁻ ions are injected becomes an LDD area, and the areainto which the n⁺ ions are injected becomes source and drain areas.

In case of a P-type TFT, p⁺ ions are injected into the active layerusing a photo-resist pattern as a mask. Accordingly, in the active layerof P-type TFT, the area into which the p⁺ ions are not injected becomesa channel area, and the area into which the p⁺ ions are injected becomessource and drain areas.

A data metal layer is deposited on the entire surface of the lowersubstrate 1 with the channel area 14C, the source area 14S and the drainarea 14D thereon, and then the data metal layer is patterned byphotolithography and etching processes including exposing and developingsteps, thereby forming a data line 4, source electrode 8 and a drainelectrode 10, as shown in FIG. 3D.

An insulting material is deposited on the entire surface of theresultant lower substrate 1 with the data line 4, the source electrode 8and the drain electrode 10 thereon, thereby forming a passivation film18, as shown in FIG. 3E. Then, the passivation film 18 is patterned byphotolithography and etching processes including exposing and developingsteps, thereby forming a contact hole 20 exposing the drain electrode10.

A transparent conductive material is deposited on the entire surface ofthe lower substrate 1 with the passivation film 18 thereon, and then thetransparent conductive material is patterned by photolithography andetching processes including exposing and developing steps, therebyforming a pixel electrode 22, as shown in FIG. 3F. The pixel electrode22 is electrically connected to the drain electrode 10 via the contacthole 20.

As described above, a fabricating method of the related artpolycrystalline silicon TFT employs a six mask process, therebycomplicating the fabricating process and increasing the fabricationcosts. This is because each mask process includes a plurality ofsub-processes, such as deposition, cleaning, photolithography, etching,photo-resist stripping and inspection. Accordingly, a fabricating methodis needed and desirable that is simpler than the fabricating method ofthe related art allowing a reduced fabricating cost.

In addition, a laser annealing is mainly used to crystallize anamorphous silicon film into a polycrystalline silicon film. The laserannealing is a method to form a polycrystalline silicon film byirradiating a laser beam on an amorphous silicon film deposited on asubstrate. In this method, laser energy of about tens or hundreds of nsis irradiated on an amorphous silicon film causing the amorphous siliconfilm to be in a melting condition, thereby forming a polycrystallinesilicon. Although the crystallization method using the laser annealinghas an advantage in that the crystallization can be performed at a lowtemperature, for example, at 400° C., the crystallization is notuniform. Further, it requires an expensive laser equipment, therebydecreasing productivity.

SUMMARY OF THE INVENTION

Accordingly, the present invention is directed to a liquid crystaldisplay panel and a fabricating method thereof that substantiallyobviates one or more of the problems due to limitations anddisadvantages of the related art.

An advantage of the present invention is to provide a liquid crystaldisplay panel and a fabricating method thereof that is capable ofenhancing the crystallization efficiency of an active layer andsimplifying the fabricating process.

Additional features and advantages of the invention will be set forth inthe description which follows, and in part will be apparent from thedescription, or may be learned by practice of the invention. Theobjectives and other advantages of the invention will be realized andattained by the structure particularly pointed out in the writtendescription and claims hereof as well as the appended drawings.

To achieve these and other advantages and in accordance with the purposeof the present invention, as embodied and broadly described, afabricating method of a liquid crystal display panel includes forming agate electrode on a substrate; forming a gate insulating film on thegate electrode formed thereon; forming an amorphous silicon film on thegate insulating film; forming an insulating pattern on the amorphoussilicon film; crystallizing the amorphous silicon film into apolycrystalline silicon film using a derivative metal, thepolycrystalline silicon film having source, drain and channel areas,wherein the insulating pattern overlaps the channel area of thepolycrystalline silicon film; and forming source and drain electrodes onthe polycrystalline silicon film, wherein the source and the drainelectrodes contacting the source and drain areas of the polycrystallinesilicon film, respectively.

In another aspect of the present invention, a liquid crystal displaypanel includes a gate electrode on a substrate; a gate insulation layeron the gate electrode; an active pattern having a channel area andsource drain areas, the channel area overlapping the gate electrode; aninsulating pattern overlapping the channel area of the active pattern onthe active pattern, wherein the insulating pattern includes a derivativemetal being diffused into the insulating pattern during a heattreatment; and source and drain electrodes contacting the source anddrain areas of the active pattern, respectively.

In yet another aspect of the present invention, a fabricating method ofa liquid crystal display panel includes forming a gate electrode on asubstrate; forming a gate insulating layer on the gate electrode;depositing an amorphous silicon film on the gate insulating layer;forming an insulating pattern on the amorphous silicon film; forming aderivative metal on the insulating pattern and the amorphous siliconfilm; crystallizing the amorphous silicon film into a polycrystallinesilicon film, the polycrystalline silicon film having source, drain andchannel areas; and forming source and drain electrodes on thepolycrystalline silicon film.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate embodiments of the invention andtogether with the description serve to explain the principles of theinvention.

In the drawings:

FIG. 1 is a schematic plan view of a related art liquid crystal displaypanel having a polycrystalline silicon thin film transistor;

FIG. 2 a sectional view of the liquid crystal display panel taken alongthe line II-II′ in FIG. 1;

FIGS. 3A to 3F are sectional views of a method of fabricating the liquidcrystal display panel in FIG. 2;

FIG. 4 is a plan view of a liquid crystal display panel having apolycrystalline silicon thin film transistor according to the presentinvention;

FIG. 5 is a sectional view of the liquid crystal display panel takenalong the line V-V′ in FIG. 4;

FIGS. 6A and 6B show a plan view and a sectional view illustrating afirst mask process according to the present invention;

FIGS. 7A and 7B show a plan view and a sectional view illustrating aprocess for forming an insulating pattern and an active layer accordingto the present invention;

FIGS. 8A to 8G are sectional views illustrating in detail a process forforming an insulating pattern and an active layer;

FIGS. 9A and 9B show a plan view and a sectional view illustrating indetail a second mask process according to the present invention;

FIGS. 10A to 10D are sectional views illustrating in detail the secondmask process in FIG. 9;

FIGS. 11A and 11B show a plan view and a sectional view illustrating athird mask process according to the present invention;

FIGS. 12A and 12B show a plan view and a sectional view illustrating afourth mask process according to the present invention; and

FIGS. 13A to 13E are sectional views illustrating another fabricatingprocess of a liquid crystal display panel having a polycrystallinesilicon thin film transistor according to the present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Reference will now be made in detail to an embodiment of the presentinvention, example of which is illustrated in the accompanying drawings.

Hereinafter, an embodiment of the present invention will be described indetail with reference to FIG. 4 to FIG. 13E.

FIG. 4 is a plan view of a liquid crystal display panel having apolycrystalline silicon thin film transistor according to a firstembodiment of the present invention, and FIG. 5 is a sectional view ofthe liquid crystal display panel taken along the line. V-V′ in FIG. 4.

Referring to FIG. 4 and FIG. 5, a liquid crystal display panel accordingto the present invention includes a gate line 102, a data line 104crossing the gate line 102 with an insulating film 112 therebetween, aTFT 130 provided at a crossing of the gate line 102 and the data line104, and a pixel electrode 122 provided in a pixel area defined by thecrossing of the gate line 102 and the data line 104.

The gate line 102 applies a gate signal to a gate-electrode 106 of theTFT 130. The data line 104 applies a pixel signal to the pixel electrode122 via a drain electrode 110 of the TFT 130.

The TFT 130 includes the gate electrode 106 connected to the gate line102, a source electrode 108 connected to the data line 104, and thedrain electrode 110 connected to the pixel electrode 122, via a contacthole 120 passing through a passivation film 118.

The gate electrode 106 is formed on a substrate 101 so as to overlap achannel area 114C of an active layer, with the gate insulating film 112between the gate electrode 106 and the channel area 114C.

The source electrode 108 is directly connected to a source area 114S ofthe active layer and the drain electrode 110 is directly connected to adrain area 114D of the active layer.

An insulating pattern 128 is formed to overlap the channel area 114Cbetween the source electrode 108 and the drain electrode 110. Theinsulting pattern 128 serves to prevent the channel area 114C of theactive layer from being over-etched.

The active layer 114 is crystallized from an amorphous silicon film to apoly crystalline silicon film by a Field Enhanced Metal InducedCrystallization (FEMIC) method using a metal catalyst. Different ions,depending on the location of the active layer 114 and type of the TFT130, are injected into the active layer 114. In other words, if the TFT130 has an N channel, at least one of n⁺ and n⁻ ions is injected intothe active layer. The active layer into which n⁻ ions are injectedbecomes an LDD area, which is used to reduce the off-current of the TFT130. The active layer into which n+ ions are injected becomes the sourcearea and the drain area, and the active layer into which the n⁺ and n⁻ions are not injected becomes the channel area. If the TFT 130 has a Pchannel, p⁺ ions are injected into the active layer. The active layerinto which p⁺ ions are injected becomes the source area and the drainarea, and the portion of the active layer not injected with p⁺ ionsbecomes the channel area.

Such a TFT 130 responds to a scanning pulse applied from the gate line102 to charge a video signal, that is, the pixel signal applied from thedata line 104 in a liquid crystal cell. Accordingly, the liquid crystalcell controls a light transmittance in accordance with the charged pixelsignal.

As a result, an electric field is formed between the pixel electrode 122to which the pixel signal is applied via the TFT 130 and a commonelectrode (not shown), which exists on the other substrate. Liquidcrystal molecules between the pixel electrode 122 and the commonelectrode rotate in response to the electric field due to the dielectricanisotropy of the liquid crystal molecules. The degree of the rotationcontrols the light transmittance of the pixel area, thereby displaying apicture.

According to the principles of the present invention, an amorphoussilicon film is transformed into a polycrystalline silicon film byFEMIC. Accordingly, an expensive laser equipment is not required for thecrystallization, thereby increasing productivity.

FIGS. 6A and 6B show a plan view and a sectional view illustrating indetail a first mask process according to the present invention.

Referring to FIGS. 6A and 6B, a first conductive patterning groupincluding a gate electrode 106 and a gate line 102 is formed on asubstrate 101 by a first mask process.

More specifically, a gate metal layer is entirely deposited on the lowersubstrate 101 by sputtering. The gate metal layer may be made of a metalincluding aluminum. The gate metal layer is patterned by aphotolithography process and etching process using the first mask,thereby forming the gate electrode 106 and the gate line 102. A bufferlayer may be formed between the first conductive patterning group andthe lower substrate 101.

FIGS. 7A and 7B show a plan view and a sectional view illustrating indetail a process for forming an insulating pattern and a polycrystallinesilicon layer according to the present invention.

Referring to FIGS. 7A and 7B, a gate insulating film 112 and apolycrystalline silicon film 114 are sequentially formed on the lowersubstrate 101 with the gate electrode 106 thereon, and an insulatingpattern overlapping the gate electrode 106 is formed on thepolycrystalline silicon film 114. A detailed description will be made inconjunction with FIGS. 8A to 8G.

A gate insulating film 112 such as silicon oxide (SiO₂) and an amorphoussilicon film are sequentially formed on the lower substrate 101 havingthe first conductive patterning group thereon by a plasma enhancedchemical vapor deposition (PECVD). As shown in FIG. 8A, an insulatingmaterial 127 including, for example, silicon oxide (SiOx) or siliconnitride (SiNx), and a photo-resist film 170 are sequentially formed onthe lower substrate 101 having the amorphous silicon film thereon. Then,as shown in FIG. 8B, the photo-resist film 170 is formed into aphoto-resist pattern 172 by a backside-exposure process wherein a UVlight is irradiated onto the photo-resist film 170 from the lowersubstrate 101. At this time, the gate electrode 106 serves as a mask,and a developing process follows to form the photo-resist pattern 172.After the formation of the photo-resist pattern 172, an insulatingpattern 128 is formed by etching the insulating material using thephoto-resist pattern 172 as a mask, as shown in FIG. 8C. The insulatingpattern 128 is formed to overlap the gate electrode 106, with the gateinsulating film 112 and the amorphous silicon film 124 therebetween.

Then, a derivative metal such as nickel (Ni) is deposited on theinsulating pattern 128 and the amorphous silicon film 124 by sputteringor PECVD to crystallize the amorphous film 124, as shown in FIG. 8D. Inthis case, the derivative metal is not formed on the portion of theamorphous silicon film 124 that is covered by the insulating pattern128.

As shown in FIG. 8E, impurity ions corresponding to the type of the TFT130 are injected into the amorphous silicon film 124 having thedeposited derivative metal 140. For instance, in case of an N-type TFT,n⁺ ions are injected, using the insulating pattern 128 as a mask, intothe portion of the amorphous silicon film 124 that does not overlap thegate electrode 106. In case of a P-type TFT, p⁺ ions are injected, usingthe insulating pattern 128 as a mask, into the portion of the amorphoussilicon film 124 that does not overlap the gate electrode 106.

Then, the amorphous film 124 having the derivative metal 140 depositedthereon is subjected to a heat treatment at a predetermined temperatureand a predetermined electric field, as shown in FIG. 8F. During thisprocess, the amorphous silicon film 124A having the derivative metal 140is crystallized by Metal Induced Crystallization (MIC), and theamorphous silicon film 124B without the induced metal 140 iscrystallized by Metal Induced Lateral Crystallization (MILC) in whichsilicide formed by a reaction of the derivative metal 140 and theamorphous silicon film induces the crystallization of the amorphoussilicon film, as the silicide continues to diffuse laterally in theamorphous silicon film 124B. In addition, since the heat treatment has asimilar process condition to an annealing condition for activating theions injected into the amorphous silicon film 124, the crystallizationprocess and an ion activation process are performed together at the sametime.

Accordingly, the amorphous silicon film is crystallized into apolycrystalline silicon film by the FEMIC, as shown in FIG. 8G, and thepolycrystalline silicon film forms an active layer 114 divided into asource area 114S, a channel area 114C and a drain area 114D depending onthe ions injected into the polycrystalline silicon film. Herein, thechannel area 114C is the area overlapping the gate electrode 106, whilethe source area and the drain area are the areas excluding the channelarea 114C in the active layer 114.

As mentioned above, the source area 114S and the drain area 114D of theactive layer formed by a heat treatment are crystallized using the MICmethod as the derivative metal is directly applied to those areas, andthe channel area 114C is crystallized by the MILC method.

FIGS. 9A and 9B show a plan view and a sectional view illustrating indetail a second mask process according to the present invention.

Referring to FIGS. 9A and 9B, a second conductive patterning groupincluding a data line 104, a source electrode 108 and a drain electrode110 of the TFT 130, is formed on the lower substrate 101 with a secondmask process, and an active layer 114 defining a source area 114S and adrain area 114D are also formed on the lower substrate 101. Such asecond mask process will be described in detail referring to FIGS. 10Ato 10D.

As shown in FIG. 10A, a data metal layer 109 is formed on the activelayer 114 by a depositing method such as PECVD and sputtering. Herein,the data metal layer 109 may be made of chromium (Cr), copper (Cu), ormolybdenum (Mo).

Then, a photo-resist 158 is formed on the data metal layer 109 and asecond mask 150 is arranged over the lower substrate 101. The secondmask 150 is formed of a transparent material and includes a masksubstrate 152 whose exposed area becomes an exposing area S2, ashielding part 154 formed at a shielding area S1 of the mask substrate152 and a diffractive exposing part 156 (or a semi-transmitting part)formed at a partial exposing area S3 of the mask substrate 152. Thephoto-resist 158 is exposed and then developed using the second mask150, to thereby form a photo-resist pattern 160 having a stepped partbetween the shielding area S1 and the partial exposing area S3corresponding to the shielding part 154 and the diffractive exposingpart 156 as shown in FIG. 10B. In other words, the height of thephoto-resist pattern 160 formed at the partial exposing area S3 (secondheight) is lower than the height of the photo-resist pattern 160 formedat the shielding area S1 (first height).

The data metal layer is patterned by a wet etching process using thephoto-resist pattern 160 as a mask, thereby forming a second conductivepatterning group including the source and drain electrodes 108 and 110in the TFT.

Thereafter, the polycrystalline silicon film is patterned by a dryetching process using the photo-resist pattern 160 as a mask, therebydefining the source area 114S and the drain area 114D of the activelayer. Subsequently, the photo-resist pattern 160 having the secondheight at the partial exposing area S3 is removed by an ashing processusing an oxygen (O₂) plasma, as shown in FIG. 10C, and the photo-resistpattern 160 having the first height at the shielding area S1 has a lowerheight. The partial exposing area S3, that is, the data metal layeroverlapping the channel area of the TFT is removed by an etching processusing the photo-resist pattern 160. Accordingly, the integrated sourceof and drain electrodes 108 and 110 are separated from each other, andthus the insulating pattern 128 overlapping the channel area 114C isexposed. Then, the photo-resist pattern 160 remaining on the conductivepatterning group is removed by a stripping process, as shown in FIG.10D.

FIGS. 11A and 11B show a plan view and a sectional view illustrating indetail a third mask process according to the present invention.

Referring to FIGS. 11A and 11B, a passivation film 118 having a contacthole 120 is formed on a lower substrate 101 having a second conductivepatterning group formed thereon including a source electrode 108 and adrain electrode 110 with a third mask process.

More specifically, an insulating material is entirely deposited on thelower substrate 101 having the source electrode 108 and the drainelectrode 110 formed thereon by a depositing method, such as PECVD andsputtering, thereby forming the passivation film 118. Herein, thepassivation film 118 is made of either an organic insulating material oran inorganic insulating material such as silicon oxide (SiO₂) andsilicon nitride (SiNx). Thereafter, a photo-resist is deposited on thelower substrate 101 having the passivation film 118 formed thereon. Thephoto-resist is then patterned by a photolithography process using athird mask to form a photo-resist pattern. The passivation film 118 ispatterned by an etching process using the photo-resist as a mask,thereby forming a contact hole 120 to expose the drain electrode 110.

FIGS. 12A and 12B show a plan view and a sectional view illustrating indetail a fourth mask process according to the present invention.

Referring to FIGS. 12A and 12B, a pixel electrode 122 to be located in apixel region is formed on a lower substrate 101 having a passivationfilm 118 formed thereon using a fourth mask process.

More specifically, a transparent conductive material and a photo-resistare sequentially deposited on the lower substrate 101 having thepassivation film 118 formed thereon by a depositing method such assputtering. Herein, the transparent conductive material is made of anyone of an indium-tin-oxide (ITO), an tin-oxide (TO) and anindium-zinc-oxide (IZO). Then, the photo-resist is patterned by exposingand developing processes using a mask, thereby forming a photo-resistpattern. The transparent conductive material is patterned by an etchingprocess using the photo-resist pattern as a mask, thereby forming apixel electrode 122. The pixel electrode 122 is connected to a drainelectrode 110 of an N-type TFT located at a picture display panel via acontact hole 120.

FIGS. 13A to 13E are sectional views representing another fabricatingmethod of a liquid crystal display panel having a polycrystallinesilicon TFT according to the present invention.

Another method of fabricating a liquid crystal display panel having apolycrystalline silicon TFT according to the present invention includesforming a gate pattern by the mask process in FIG. 6; forming aninsulating pattern by a mask process in FIGS. 13A to 13E; forming a datapattern and an active layer having an area defined by the mask processin FIG. 9; forming a passivation film having a contact hole by the maskprocess in FIG. 11; and forming a pixel electrode by the mask process inFIG. 12.

Meanwhile, the mask process forming an insulating pattern will bedescribed in detail in conjunction with FIGS. 13A to 13E.

A gate insulating film 112 such as silicon oxide SiO₂ and an amorphoussilicon film 124 are sequentially deposited on a lower substrate 101having a gate electrode 106 formed thereon by using PECVD. Then, asshown in FIG. 13A, a derivative metal 140 such as nickel (Ni) isdeposited on the amorphous silicon film 124 by sputtering and PECVD tocrystallize the amorphous silicon film 124.

An insulating material including silicon oxide (SiOx) or silicon nitride(SiNx) is deposited on the lower substrate 101 having the derivativemetal 140 by PECVD. The insulating material is patterned byphotolithography and etching processes, thereby forming an insulatingpattern 128 overlapping the gate electrode 106 as shown in FIG. 13B.

Impurity ions corresponding to the type of the TFT 130 are injected intothe amorphous silicon film having the insulating pattern 128, as shownin FIG. 13C. For instance, in case of an N-type TFT, n⁺ ions areinjected into the portion of the amorphous silicon film 124 that doesnot overlap the gate electrode 106 using the insulating pattern 128 as amask. In case of a P-type TFT, p⁺ ions are injected into the amorphoussilicon film 124 that does not overlap the gate electrode 106 using theinsulating pattern 128 as a mask.

Then, the amorphous silicon film 124 having the derivative metal 140deposited thereon is subjected to a heat treatment at a predeterminedtemperature and a predetermined electric field, as shown in FIG. 13D.During this process, the amorphous silicon film 124 to which thederivative metal 140 is applied is crystallized by a Metal InducedCrystallization (MIC) by the heat treatment. Moreover, since the heattreatment has a similar process condition to an annealing condition foractivating the ions injected into the amorphous silicon film 124, thecrystallization process and an ion activation process are performedtogether at the same time. Furthermore, the derivative metal 140 withinthe active layer area overlapping the gate electrode 106 diffuses towardthe backside of the substrate 110 by the heat treatment, andconcentrates at the substrate 101 neighboring the impurity ions. Thederivative metal does not remain within the area overlapping the gateelectrode 106 by so-called gettering effect, thereby preventing aleakage current.

Accordingly, the amorphous silicon film is crystallized into apolycrystalline silicon film by FEMIC, as shown in FIG. 13E, and thepolycrystalline silicon film is divided into a source area 114S, achannel area 114C and a drain area 114D depending on the ions injectedinto the polycrystalline silicon film. The source area 114S and thedrain area 114D of the active layer formed by the heat treatment arecrystallized by FEMIC as the derivative metal is directly applied tothose areas.

As described above, in the liquid crystal display panel and thefabricating method thereof according to the present invention, the ioninjection process and the crystallization process are accomplished bythe backside-exposure using the gate electrode as a mask, therebyforming the liquid crystal display panel using the four mask process. Asa result, the number of masks and costs are reduced. Since thecrystallization process is accomplished by FEMIC, an expensive laserequipment is not required, thereby increasing productivity.

It will be apparent to those skilled in the art that variousmodifications and variation can be made in the present invention withoutdeparting from the spirit or scope of the invention. Thus, it isintended that the present invention cover the modifications andvariations of this invention provided they come within the scope of theappended claims and their equivalents.

1. A method of fabricating a liquid crystal display panel, comprising:forming a gate electrode on a substrate; forming a gate insulating filmon the gate electrode formed thereon; forming an amorphous silicon filmon the gate insulating film; forming an insulating pattern on theamorphous silicon film; crystallizing the amorphous silicon film into apolycrystalline silicon film using a derivative metal, thepolycrystalline silicon film having source, drain and channel areas,wherein the insulating pattern overlaps the channel area of thepolycrystalline silicon film; and forming source and drain electrodes onthe polycrystalline silicon film, wherein the source and the drainelectrodes contacting the source and drain areas of the polycrystallinesilicon film, respectively.
 2. The fabricating method of the liquidcrystal display panel according to claim 1, wherein the derivative metalincludes nickel (Ni).
 3. The fabricating method of the liquid crystaldisplay panel according to claim 1, wherein crystallizing the amorphoussilicon film into a polycrystalline silicon film using a derivativemetal further includes: forming the derivative metal on the insulatingpattern and the amorphous silicon film; injecting an impurity ion intothe amorphous silicon film having the derivative metal formed thereon;and applying a heat and an electric field to the amorphous silicon film.4. The fabricating method of the liquid crystal display panel accordingto claim 1, wherein forming an insulating pattern on the amorphoussilicon film further includes: forming sequentially an insulatingmaterial and an photo-resist on the amorphous silicon film; irradiatinglight from the backside of the substrate toward the photo-resist;developing the photo-resist to form a photo-resist pattern; and etchingthe insulating material using the photo-resist pattern as a mask.
 5. Thefabricating method of the liquid crystal display panel according toclaim 3, wherein the impurity ion injected into the amorphous siliconfilm is activated during the application of the heat.
 6. The fabricatingmethod of the liquid crystal display panel according to claim 1, whereinforming source and drain electrodes on the polycrystalline silicon filmfurther includes: forming sequentially a data metal layer and thephoto-resist on the polycrystalline film; forming a stepped photo-resistpattern with a mask having a partially exposing part; etching the datametal layer and the polycrystalline silicon film using the steppedphoto-resist pattern; ashing the stepped photo-resist pattern; andetching the data metal layer using the ashed photo-resist pattern,thereby exposing the insulating pattern overlapping the channel area ofthe polycrystalline silicon film. 7-13. (canceled)
 14. A method offabricating a liquid crystal display panel, comprising: forming a gateelectrode on a substrate; forming a gate insulating layer on the gateelectrode; depositing an amorphous silicon film on the gate insulatinglayer; forming an insulating pattern on the amorphous silicon film;forming a derivative metal on the insulating pattern and the amorphoussilicon film; crystallizing the amorphous silicon film into apolycrystalline silicon film, the polycrystalline silicon film havingsource, drain and channel areas; and forming source and drain electrodeson the polycrystalline silicon film.
 15. The fabricating method of theliquid crystal display panel according to claim 14, wherein theinsulating pattern is formed by a backside exposure using the gateelectrode as a mask.
 16. The fabricating method of the liquid crystaldisplay panel according to claim 14, wherein the insulating patternoverlaps the channel area of the polycrystalline silicon film.
 17. Thefabricating method of the liquid crystal display panel according toclaim 14, wherein the source and drain electrodes are formed using amask having a diffractive exposing part.
 18. The fabricating method ofthe liquid crystal display panel according to claim 15, wherein theliquid crystal display panel is formed with four masks.
 19. Thefabricating method of the liquid crystal display panel according toclaim 14, further includes forming a passivation layer having a contacthole on the source and drain electrodes and forming a transparentelectrode on the passivation layer.
 20. The fabricating method of theliquid crystal display panel according to claim 14, whereincrystallizing the amorphous silicon film into a polycrystalline siliconfilm further includes applying a heat and an electric field to theamorphous silicon film.